SiO$-x$/N$-y$/ thin films were prepared by Ion Beam Sputter Deposition (IBS) and Ion Assisted Deposition (IAD) on polished fused-silica- and BK7-substrates. The influence of process parameters on fundamental film properties was analyzed. Investigated parameters in the IAD process were gas composition, substrate temperature, ion current density, ion energy and neutralization current. The deposition rate and the gas composition were found to be essential parameters of the IBS process. Film characterization was performed by spectrophotometric analysis, laser calorimetry, laser damage testing according to ISO 11254 and X-ray spectroscopy to obtain refractive index, absorption coefficient, damage threshold/morphology and film stoichiometry respectively. Important technical details about both deposition processes are reported.
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机译：通过离子束溅射沉积（IBS）和离子辅助沉积（IAD）在抛光熔融二氧化硅和BK7-基板上制备SiO $-$ / N $ /薄膜。分析了工艺参数对基础膜性能的影响。 IAD过程中的研究参数是气体成分，衬底温度，离子电流密度，离子能量和中和电流。发现沉积速率和气体组合物是IBS过程的基本参数。通过分光光度分析，激光量热法，激光损伤测试，根据ISO 11254和X射线光谱进行薄膜表征，分别获得折射率，吸收系数，损伤阈值/形态和膜化学计量。报告了有关沉积过程的重要技术细节。
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