New switching simulation models of power electronic parts as IGBT, MOSFET and power diode

机译：电力电子零件的新型开关仿真型号为IGBT，MOSFET和电源二极管

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The paper describes some accuracy problems of computer simulation models of power MOSFETs, IGBTs and power diodes in the simulation program PSPICE. New switching models of these devices are presented.

机译：本文介绍了仿真程序PSPICE中功率MOSFET，IGBT和电源二极管计算机仿真模型的一些准确性问题。提供了这些设备的新开关模型。

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《International Conference on Industrial Electronics, Control and Instrumentation》|1994年||共5页
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Kovac D.; Kovacova I.; Institute of Electric and Electronic Engineer;
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中图分类自动化技术、计算机技术;
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4. New switching simulation models of power electronic parts as IGBT, MOSFET and power diode [C] . Kovac, D., Kovacova, Industrial Electronics, Control and Instrumentation, 1994. IECON '94., 20th International Conference on . 1994

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7. An analysis of the switching performance and robustness of power MOSFETs body diodes : a technology evaluation [O] . Jahdi, Saeed, Alatise, Olayiwola M., Bonyadi, Roozbeh, 2015

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New switching simulation models of power electronic parts as IGBT, MOSFET and power diode

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