High-power single-transverse-mode operation of narrow-ridge-waveguide 0.98-/spl mu/m InGaAs/AlGaAs strained-quantum-well lasers by in situ monitored RIBE

摘要

Narrow ridge waveguide 0.98-/spl mu/m InGaAs/AlGaAs quantum-well laser diodes (LDs) fabricated by in situ monitored reactive ion beam etching operated in the fundamental lateral-mode up to 254 mW, and fiber-coupled power was as much as 150 mW.