It is well known that electrode/PZT interface affects the electrical properties of PZT thin film capacitors. Electrode stress is one of the key parameters which determine the interface characteristics. Here we report the effects of bottom electrode stress on the properties of Pt/PZT/Pt capacitors. PZT films were deposited by MOD method on Pt/Ti/SiO/sub 2//Si substrates with various bottom electrode stresses. Structural and compositional analyses were made by TEM/TED, XTEM, XRD. Stress variations due to subsequent processing steps were measured by using laser deflection method. Finally, electrical properties were evaluated by testing hysteretic properties, fatigue, and leakage current. Guidelines for reliability improvement of PZT thin film capacitors can be made by correlating the above results.
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机译：众所周知，电极/ PZT接口影响PZT薄膜电容器的电性能。电极应力是确定接口特性的关键参数之一。在这里，我们报告了底部电极应力对Pt / PZT / PT电容器性能的影响。通过Mod方法在具有各种底部电极应力的Pt / Ti / SiO / Sub 2 // Si基板上沉积PZT薄膜。结构和组成分析由TEM / TED，XTEM，XRD制成。通过使用激光偏转法测量由于随后的处理步骤引起的应力变化。最后，通过测试滞后性，疲劳和漏电流来评估电性能。通过将上述结果相关联，可以对PZT薄膜电容器的可靠性改进准则进行相关性。
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