It is well known that electrode/PZT interface affects the electrical properties of PZT thin film capacitors. Electrode stress is one of the key parameters which determine the interface characteristics. Here we report the effects of bottom electrode stress on the properties of Pt/PZT/Pt capacitors. PZT films were deposited by MOD method on Pt/Ti/SiO/sub 2//Si substrates with various bottom electrode stresses. Structural and compositional analyses were made by TEM/TED, XTEM, XRD. Stress variations due to subsequent processing steps were measured by using laser deflection method. Finally, electrical properties were evaluated by testing hysteretic properties, fatigue, and leakage current. Guidelines for reliability improvement of PZT thin film capacitors can be made by correlating the above results.
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机译：众所周知，电极/ PZT界面会影响PZT薄膜电容器的电性能。电极应力是决定界面特性的关键参数之一。在这里，我们报告了底部电极应力对Pt / PZT / Pt电容器性能的影响。通过MOD方法在具有不同底部电极应力的Pt / Ti / SiO / sub 2 // Si衬底上沉积PZT膜。结构和成分分析是通过TEM / TED，XTEM，XRD进行的。通过使用激光偏转方法来测量由于随后的处理步骤引起的应力变化。最后，通过测试磁滞特性，疲劳和漏电流来评估电性能。通过关联上述结果，可以制定出提高PZT薄膜电容器可靠性的准则。
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