JESSI Project E 162: status of the deep-UV resist

摘要

Within the joint European project `JESSI E 162' we pursue deep UV image processing for 0.35 $mu@m lithography in chip production. To reach this goal, major advancements have to be made in three areas: stepper, resist, and track. In this paper, the status of the JESSI positive deep UV resist is presented. Based on the SUCCESS resist concept a stable resist process was developed. The major achievements are: linewidth stability for 0.35 $mu@m lines and larger ones during delay times up to 120 min between exposure and PEB, 0.24 $mu@m lines stable for 30 min, linearity down to 0.35 $mu@m (NA 0.42), resolution of 0.22 $mu@m with phase-shift mask (NA 0.42), and dry etch resistance better than conventional novolac resists.