Investigation on IGBT switching process with variable gate charge current

摘要

Turn on and turn off switching characteristic of an IGBT can be widely influenced by the shape of gate current. The paper treats measurements of switching behaviour with extremely high gate charging currents at turn on and turn off for inductive load with free wheeling diode. The gate drive for high slew rates must be designed in respect of HF rules, and the commutation circuit should be laid out with very low inductance. The test circuits are described. The measurements are demonstrated and compared with computer simulations.