ctric field structure in GaAs photoconductive switches was recorded by means of an optical diagnostic technique which is based on the Franz-Keldysh effect. At low voltages a 100 $mu@m wide region of high electric field strength was seen at the cathode only. With increasing voltage, but below the lock-on value, strong domain like field structures emerge in the anode region. At voltages where lock-on of the photocurrent occurred, current filaments were recorded which seem to shorten the electric field structures. Damage due to filamentation was observed mainly at the contacts. Increasing the intensity of the activating laser and consequently the photocurrent caused the electric field in the domains near the anode to increase and resulted in a lowering of the threshold value for lock-on.
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机译：通过基于FRANZ-KELDYSH效应的光学诊断技术记录GaAs光电导电开关中的CTRIC场结构。在低电压下，仅在阴极处看到100 $ MU @ M宽区域的高电场强度。随着电压的增加，但低于锁定值，在阳极区域中出现的强域样域结构。在发生光电流的锁定电压的电压下，记录了电流丝，似乎缩短了电场结构。主要在接触处观察到由于细丝引起的损伤。增加激活激光的强度，因此光电流导致阳极附近的畴中的电场增加，并导致锁定阈值的降低。
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