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Raman scattering of LO bulk-like and interface modes in GaAs/AlAs superlattices

机译:GAAS / ALAS Supertrices中LO批量样和接口模式的拉曼散射

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(GaAs)$-6$/(AlAs)$-6$/ sample was grown on $LB@001$RB@-oriented semi-insulating GaAs substrate by MBE. The Raman scattering was measured at room temperature and under off- and in-resonance conditions. The GaAs even and odd modes were observed in the polarized and depolarized spectra, respectively, while the interface modes appear in both configurations. The second-order Raman spectra show that the polarized spectra are composed of the overtones and combinations of the even and interface modes, while the depolarized spectra are composed of the combinations of one odd mode and one even mode or one interface mode.
机译:(GaAs)$ - 6 $ /(alas)$ - 6 $ / sample由mbe以$ lb @ 001 $ rb @-oriented半绝缘GAAS基板生长。拉曼散射在室温下测量,在室温下测量和在共振条件下。在极化和去极化的光谱中观察到GaAs偶数和奇数模式,而接口模式出现在这两种配置中。二阶拉曼光谱表明,偏振光谱由偶数和接口模式的泛和和组合组成,而去极化光谱由一个奇数模式和一个偶数模式或一个接口模式组成。

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