Photoluminescence linewidth broadening due to bound exciton interaction

摘要

The optical properties of bound and free excitons in quantum wells have been the subject of extensive research over the past few decades. Recently, we have managed to identify some of the intrinsic optical properties of GaAs quantum wells. An issue of fundamental importance is the contribution of various scattering mechanisms to the measured linewidth. Although the linewidth of quantum wells has been a subject of intense research, it has been very difficult to interpret and distinguish between the various scattering mechanisms. One would also like to know the fundamental limitations to the linewidth. In this work, we show the various components to the linewidth through extensive optical measurements on a series of GaAs quantum well samples.