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Amorphous thin films of ferroelectric oxides

机译:铁电氧化物的无定形薄膜

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Amorphous thin films of ferroelectric LiNbO$-3$/ and Pb(Zr$-0.52$/Ti$- 0.48$/)O$-3$/ were prepared on a variety of substrates. Their properties were characterized in comparison with typical ferroelectric crystal behavior. It was found that these amorphous thin films show ferroelectric-like behaviors well before being crystallized. These findings suggest possible practical applications in areas where ferroelectric crystals are routinely in use. A structural model is proposed to account for the ferroelectric-like behaviors in the amorphous phases.
机译:无定形薄膜的铁电LINBO $ -3 $ /和PB(ZR $ -0.52 $ / TI $ - 0.48 $ /)O $ -3 $ /在各种基板上准备。与典型的铁电晶体行为相比,它们的性质表征。发现这些非晶薄膜在结晶前显示出铁电样行为。这些发现表明,在铁电晶体常规使用的区域中可能的实际应用。建议构造模型考虑无定形阶段的铁电样行为。

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