Multiple peak resonant tunneling diode for multi-valued memory

摘要

Several designs for a high-speed static random access multivalued memory using the folding characteristics of multiple peak resonant tunneling diodes (RTDs) are presented. The different designs are described and studied by comparing their power consumption under different conditions of device parameters and the switching speed. It is shown that the proposed memory cell using a pair of multiple-peak RTDs yields the best result from the standpoint of size, power dissipation, and speed.