Atomic scale chemistry of Co- and Ni-Si(100) interfaces

摘要

This paper presents results on the atomic scale chemistry at the Co-Si(100) and Ni-Si(100) interfaces, obtained using atom probe techniques. Room temperature deposition of Co on Si(100) oriented specimens is found to form a reacted layer of composition CoSi_2- A layer of this composition appears to persist at the interface during annealing at 250°C as the metal reacts to form the CoSi silicide. The position-sensitive atom probe has been applied to the analysis of metal-semiconductor interfaces for the first time, showing the potential of this technique for mapping the variation in chemistry over an area of the interface.