0.50 um contact measurement and characterization

摘要

A comparison of SEM measurements vs. electrical measurements of contact holes is presented. In-line SEM measurements on a Hitachi S6000 and measurements of micrographs from an off-line JEOL 845 SEM are compared to electrical measurements on a Prometrix LithoMap$+R$/ system for metrology of contacts down to 0.25 $mu@m size. The electrical measurements of contacts through focus/exposure variations on the stepper are shown to correlate very well with SEM measurements. Electrical measurement of contact holes in conductive films is shown to reflect actual process latitudes on oxide wafers, allowing electrical metrology to be used in optimizing lithography processes.