Rapid thermal low pressure (metallorganic) chemical vapor deposition of thin films onto InP

摘要

The application of the rapid thermal low pressure metalorganic chemical vapor deposition (RT-LPMOCVD) technique to the deposition of non-semiconductor thin-layer materials necessary for producing metal contacts to InP-based microelectronic devices is discussed. Both dielectric (SiO/sub 2/) and semimetal (TiN/sub x/) films were deposited. The two processes were realized in low pressures (5-30 torr), relatively low temperatures (350-550 degrees C), and short durations (1-200 s), exhibiting rapid growth kinetics and uniform deposited film morphology. The influence of the process parameters on the two film properties is described, and optimum deposition conditions are identified. Contacts that were prepared by RT-LPMOCVD of the TiN/sub x/ onto p-InGaAs layer using etched patterns in RT-LPCVD-SiO/sub 2/ layer are characterized as ohmic contacts.