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Copper Interconnections for High Performance and Fine Pitch Flipchip Digital Applications and Ultra-miniaturized RF Module Applications

机译:高性能和精细音高触筒数字应用和超小型射频模块应用的铜互连

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摘要

Copper is an excellent candidate material for next generation of chip-package interconnections because of its high electrical and thermal conductivities, good mechanical properties at assembly and operating temperatures and well-established infrastructure to integrate with back-end processes with electroplating technology downscalable to nanoscale. This technology can also accommodate the increasing I/O density of future microprocessors with the best electrical and mechanical performance. In addition, embedment of active components with chip-last approach being proposed by Georgia Tech PRC can also be realized with the shortest interconnections resulting in performance and miniaturization comparable to chip-first approach. There is an increasing trend to replace solders with copper because of these advantages. In this paper, we describe the current status of copper bumping and copper interconnection and assembly technologies and show our future strategy.
机译:铜是下一代芯片封装互连的优异候选材料,因为其高电导率和热导体,组装和操作温度和工作温度良好的机械性能以及与较型纳米级电镀技术的后端工艺集成的良好的机械性能和建立的基础设施。该技术还可以适应未来微处理器的不断增长的I / O密度,具有最佳的电气和机械性能。此外,Georgia Tech PRC提出的具有芯片 - 最后方法的活性组件的嵌入也可以实现与最短的互连,导致与芯片第一方法相当的性能和小型化。由于这些优势,替代铜的焊料越来越呈增加。在本文中,我们描述了铜碰撞和铜互连和装配技术的当前状态,并展示了我们未来的策略。

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