Improved EPROM moisture performance using spin-on-glass (SOG) for passivation planarization

摘要

Plastic-encapsulated EPROM (erasable programmable read-only memory) moisture reliability is contingent on good passivation integrity. Step coverage of passivation becomes an issue when array metal pitch is reduced in high-density EPROMs. Planarizing the passivation with an intermediate spin-on-glass layer is shown to reduce the long-term stress failure rate by a factor of three and thus to improve EPROM performance in moisture.