Ka-band monolithic GaAs FET power amplifier modules

摘要

Monolithic GaAs FET power amplifiers consisting of several power-combined devices are fabricated and evaluated. The baseline monolithic chip design consists of a single stage 400- mu m FET amplifier and a six-way traveling-wave power divider/combiner with a single-stage amplifier in each of the six arms. Several chip combinations were used to make a 1-W amplifier with 5-dB gain and a 0.55-W amplifier with 27-dB gain at 34 GHz. A two-way hybrid combining scheme making use of 0.6-W monolithic chips producing 1 W of output power is also described.