A novel HBT distributed amplifier design topology based on attenuation compensation techniques

摘要

We report on a novel HBT distributed amplifier (DA) design which achieves the highest gain-bandwidth product (GBP) per device f/sub T/ so far reported for HBT distributed amplifiers. This paper introduces a new design topology for HBT DA's which incorporates attenuation compensation on both the input and output transmission lines. A four-section HBT DA using this novel topology achieves a gain of 15 dB and a 3-dB bandwidth of 15 GHz. The resulting gain-bandwidth product is 84 GHz. When normalized to the device f/sub T/, this DA achieves the highest normalized gain-bandwidth-product figure of merit for HBT DA's=3.67, which is a 55% improvement over existing state-of-the-art performance. The new device configuration offers 15-20 dB more available gain for the device unit cell and results in gain-bandwidth product improvements of 200% over a conventional common-emitter DA configuration.