A W-band multifunction MMIC

摘要

A 94-GHz multifunction monolithic microwave integrated circuit (MMIC) incorporating two different materials on the same chip has been developed. This MMIC contains a three-stage pseudomorphic high-electron mobility transistor (P-HEMT) low-noise amplifier (LNA) and a balanced gallium arsenide (GaAs) Schottky diode mixer. The MMIC achieved a 7-dB conversion gain-with 7.3-dB noise figure over the 93- to 94.5-GHz band. It was fabricated using vacuum passivation technology for the LNA to alleviate possible traps at the SiN-GaAs interface. The technology for incorporating two different materials on the same chip is sufficiently flexible to be applied to analog/digital ICs and microwave/optical optoelectronic ICs as well. This is believed to be the first report of a W-band multifunction MMIC having different materials on the same chip.