A monolithic 2-52 GHz HEMT matrix distributed amplifier in coplanar waveguide technology

摘要

This paper discusses design, performance and fabrication of a two-stage four-section GaAs monolithic matrix distributed amplifier covering the frequency range from 2 to 52 GHz. The achieved gain is about 9 dB and the return loss is better than 12 dB. The devices we used are 2/spl times/25 /spl mu/m, 0.2 /spl mu/m recessed gate AlGaAs-HEMTs and the coplanar waveguide was the propagation medium for this broadband amplifier. The chip dimensions of the amplifier including the bias networks are 2.0 mm/spl times/2.5 mm.