Rectification failure in GaAs MESFETs subjected to single pulses of intense microwave radiation

摘要

An important mechanism for damage to GaAs microwave integrated circuits from single pulses of intense microwave radiation has been observed by the use of high-speed photography and optical and RF spectroscopy. This mechanism is named rectification failure because it transforms the Schottky junctions of the transistors to ohmic resistors. High-speed photography was used to clock the emission of optical radiation after the arrival of the high-power microwave pulse, optical spectroscopy was employed to determine the source of the optical emissions, and RF spectroscopy was applied to monitor the generation of harmonics of the incident radiation as a function of time during each test pulse. Devices tested included packaged low-noise amplifiers and power amplifiers. The tests proceeded by the direct injection of a single pulse of microwave radiation into the input port of the device. The pulses typically lasted for 100 ns. Testing would start at power levels too low to inflict damage and would proceed with successively higher power pulses until damage was observed. Devices were tested both with and without bias voltages applied. The results of the testing are presented.