A DC-18 GHz GaAs MESFET monolithic variable slope gain-equalizer IC

摘要

The design, fabrication and measured performance are presented for a DC-18 GHz GaAs MESFET monolithic variable-slope gain-equalizer IC. The IC design uses a modified bridged-T configuration using two GaAs MESFETs. This provides an attenuation slope of -0.67 dB/GHz at the maximum linear slope state with a minimum insertion loss of 2.7 dB at 18 GHz and a deviation of linearity less than 0.25 dB from DC to 18 GHz. The slope is electrically variable from -0.67 to +0.22 dB/GHz. The input and output VSWRs are less than 2:1 over the entire frequency and control range.