A Ka Band 2-Stage Linear Doherty Amplifier with 23dBm Psat and 29 6dB-Backoff PAE in pMOS-SOI

摘要

A CMOS-SOI Doherty amplifier which achieves high output power (23dBm Psat), high backoff efficiency (29% PAE at -6dB, 24% at -8dB) and high linearity for Ka band 5G applications is reported. Adaptive bias control is used to increase backoff efficiency for the peaking amplifier, while maintaining high linearity. Gain of 16dB is attained with the two stage design. The output matching / combiner network design minimizes loss (simulated to be 0.8dB). The use of pMOS provides potential for significantly increased reliability compared to nMOS counterparts.