Advanced one micron BiCMOS technology for high speed 256K srams

摘要

The MOS technology produces the most straight forward and the highest density memory array for SRAM technology. The ECL process, however, dominates the high performance arena at the cost of power dissipation and density, A well orchestrated combination of these two technologies with proper design methodology results in high speed memories and logic products with specific performance targets that neither technology could deliver alone (l)-(3). It is for such applications that BiCMOS technology provides the optimum solution. In this paper an advanced one micron BiCMOS technology optimized for a high speed 256K SRAM is described. Transistor optimizations for MOSFET and bipolar devices are presented herein. Ring oscillators, memory array and functional subcircuits have been fabricated to verify the performance of the technology.