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Real-time monitoring of the fatigue damage accumulation in polysilicon microstructures at different applied stresses

机译:不同施加应力下多晶硅微观结构疲劳损伤积累的实时监测

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Despite fatigue failure in polysilicon microstructures has been reported by many research groups, its origin is still contentious. In this paper it is presented a systematic fatigue analysis on suitably designed polysilicon microstructures including a 15 μm thick notched specimen with a radius of curvature of 0.5 μm. Different fatigue tests are performed as a function of the applied stress. During each test the elastic stiffness of the structure is real-time monitored to investigate how fatigue effects nucleate and propagate during fatigue lifetime. It is shown that no fatigue effect is evidenced at low applied peak stresses during fatigue life. On the contrary for high applied stresses two different effects seem to be responsible of the device degradation: the presence of a stable damage accumulation is revealed on specimens tested with maximum peak stresses between the 50% and the 60% of the monotonic rupture stress. This degradation begins after ≈ 10~6 cycles and progressively leads to the device failure. For maximum peak stresses beyond the 60% of the monotonical rupture stress the failure happens within a number of cycles lower than 10~5. In this case the delayed failure is sudden and it is not anticipated by any elastic stiffness decrease prior to failure.
机译:尽管许多研究组报告了多晶硅微观结构的疲劳失效,但其起源仍然有争议。本文介绍了一种适当设计的多晶硅微结构的系统疲劳分析,包括15μm厚的缺口样品,曲率半径为0.5μm。作为施加的应力的函数进行不同的疲劳试验。在每次测试期间,结构的弹性刚度是实时监测,以研究疲劳效果如何在疲劳寿命期间核心和传播。结果表明,在疲劳寿命期间没有在低施加的峰值应力下证明了疲劳效应。相反,对于高施加的应力,两种不同的效果似乎是损失的负责:在测试的最大峰值应力和单调破裂应力的60%之间的最大峰值应力的试样上显示出稳定损伤积累的存在。在≈10〜6周期之后,这种降解开始并逐渐导致器件故障。对于超过单调破裂应力的60%的最大峰值应力,在低于10〜5的循环中发生故障发生故障。在这种情况下,延迟失败是突然的,并且在发生故障之前任何弹性刚度都不会预期。

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