Spin-dependent current modulation in perovskite-oxide-based three-terminal magnetic tunnel junctions for the realization of vertical spin transistors

摘要

A spin MOSFET, which is a MOSFET with ferromagnetic source and drain electrodes, is expected to be a next-generation device that overcomes the limitations of the current semiconductor technology . For the realization of the spin MOSFET, single-crystalline half-metallic perovskite oxide La_(1-x)Sr_xMnO_3 (LSMO), which has a high Curie temperature (TC = ~370 K), is a promising material for the drain and source electrodes. By combining LSMO and perovskite semiconductor materials, we can make high-quality all-epitaxial single-crystal heterostructures, which can suppress spin scattering and realize efficient spin injection and detection . In this study, we have successfully modulated the tunneling current by applying a gate bias voltage to an LSMO-based magnetic tunnel junction (MTJ) using ionic liquid. Our result is an important step for the realization of perovskite-oxide-based vertical spin MOSFETs.