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An Implementation of External Capacitor-less Low-DropOut Voltage Regulator in 45nm Technology with Output Voltage Ranging from 0.4V-1.2V

机译:45nm技术中外部电容器低压丢失电压调节器的实施,输出电压范围为0.4V-1.2V

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Low-DropOut (LDO) regulators are one of the most essential and critical analog blocks in power management of System-on-Chip (SoC) design. In this work, we present an external capacitor-less LDO voltage regulator design implemented in 45nm technology. The proposed design eliminates the resistive feedback network with a transistor which allows more control over output voltage and improve the transient response and PSRR. The design consists of Error Amplifier (EA), one common-source (CS) stage, one buffer stage and 2 pass transistors which offers a wide range of output voltage ranging from 0.4V-1.2V with an input voltage of 1.8V. The design also ensures low power operation with 7.824uA quiescent current. Furthermore, the design incurs minimum area of 0.0149mm2and voltage overhead of 25mV(max) along with a stable output voltage with less than 1mV ripple. The schematic and layout designs are implemented and simulated in Cadence Virtuoso using 45nm bulk CMOS process.
机译:低压丢失(LDO)调节器是片上系统(SOC)设计的电源管理中最为强大和临界模拟块之一。在这项工作中,我们提出了一种在45nm技术中实现的外部电容器较少的LDO电压稳压器设计。所提出的设计消除了具有晶体管的电阻反馈网络,该晶体管允许更好地控制输出电压并改善瞬态响应和PSRR。该设计包括误差放大器(EA),一个公共源(CS)级,一个缓冲级和2级通过晶体管,其提供宽范围的输出电压,范围为0.4V-1.2V,输入电压为1.8V。该设计还确保了7.824UA静态电流的低功耗操作。此外,设计会导致最小面积为0.0149mm 2 和25mV(最大值)的电压开销以及稳定的输出电压,幅度小于1mV。使用45nm散装CMOS工艺在Cadence Virtuoso中实现和模拟示意图和布局设计。

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