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Chemical Transfer of in-situ Functionalized Aligned Carbon Nanotube Structures for Microelectronic Packaging Applications

机译:用于微电子包装应用的原位官能化对准碳纳米管结构的化学转移

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As IC performance increases, many technical challenges appear in the areas of current-carrying capacities, thermal management, I/O density, and thermal-mechanical reliability. To address these problems, the use of aligned carbon nanotubes (CNTs) has been proposed in IC packaging for electrical interconnect and thermal interface materials (TIMs). The theoretically superior electrical, thermal, and mechanical properties of CNTs promise to reduce the interconnect pitch size, increase thermal conductivity, and enhance system reliability, which is expected to bring about revolutionary improvement to microelectronics. However, the problems with the CVD growth process such as high growth temperature and poor adhesion of CNTs to substrates, challenges in selectively patterning CNT structures and high contact resistance of CNT/electrodes become barriers for CNT applications. To circumvent these problems, great efforts have been made to separate the CVD process and the ACNT assembly by various ACNT transfer technology with moderate success. For the popular wet chemical process, pristine CNTs are functionalized in acids and then assembled onto the substrate in a solution. The functionalization process usually truncates the CNTs randomly and introduces high defect density to the lateral walls of the CNTs, which greatly degrades the intrinsic electrical and thermal properties of the 1-D structure of the CNTs. Furthermore, big challenges exist in selective patterning, length control and quality control of functionalized ACNTs. In this study, we proposed the "chemical transfer" method to directly assemble aligned CNTs onto gold-coated substrates.
机译:随着IC性能的增加,许多技术挑战出现在携带电流容量,热管理,I / O密度和热机械可靠性的领域。为了解决这些问题,已经在IC包装中提出了用于电互连和热界面材料(TIMS)的使用对准碳纳米管(CNT)。 CNT的理论上优异的电气,热和机械性能,以减少互连间距尺寸,增加导热性,增强系统可靠性,这预计将引起微电子的革命性改善。然而,CVD生长过程的问题如高生长温度和CNTs对基材的差,在选择性地图案化CNT /电极的CNT结构和高接触电阻方面的挑战成为CNT应用的屏障。为了规避这些问题,已经通过各种ACNT转移技术分离CVD过程和ACNT组件,以适中的成功分离。对于流行的湿化学过程,原始CNT在酸中官能化,然后在溶液中组装到基板上。官能化过程通常随机截断CNT,并将高缺陷密度引入CNT的侧壁,这极大地降低了CNT的1-D结构的固有电气和热性质。此外,官能化ACNT的选择性图案化,长度控制和质量控制中存在大挑战。在这项研究中,我们提出了“化学转移”方法直接将对齐的CNT直接组装在金涂覆的基材上。

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