Temporary Bonding and De-bonding Process for 2.5D/3D Applications

摘要

Temporary bonding and de-bonding (TBDB) is one key technology in enabling the 2.5D/3D integration of semiconductor devices [1]. In this paper, we first evaluate two TBDB methods using different TBDB mechanism and corresponding adhesive materials, in particular for via-last Through Silicon Via (TSV) process. We compare a solvent-based TBDB method [2], [3] with another mechanical-based TBDB method. The second part of this paper analyze the process issues and root causes related to each TBDB methodology. Continuous improvement will need to rely on TBDB material and process development as well as integration optimization.