A 60GHz Power Amplifier with Coupled-line Matching Balun in 55-nm CMOS

摘要

This paper presents a differential 60GHz power amplifier in 55-nm CMOS with coupled-line matching balun for input stage and output stage. The proposed power amplifier is biased in class AB and consists of three common-source stages. The coupled-line geometry provides an area efficient balun design and ensures low-loss matching network. The circuit achieves a saturated power of 17.1dBm, 1-dB compression power of 14.3dBm, gain of over 28dB from 53 to 63GHz with a peak value of 31dB at 60GHz and a peak P AE of 17% at 60GHz with 1.2V supply.