11THz GaAs Terahertz Schottky Barrier Diode with Sub 0.5 fF C_j0

摘要

GaAs terahertz schottky barrier diode SBD has been a major technology in terahertz wave multiplexing, mixing and direct detection for decades, due to its high mobility and low capacity. In this paper, T-anode GaAs terahertz SBD was presented with its $C_{mathrm{j}0}$ scaled into sub-fF range. Scalling C-V measurement showed $C_{mathrm{j}0}$ without parasitic capacity reached 0.476fF for the $0.5mumathrm{m}$ anode diameter device. With the relative low series resistance Rs of $28.8mathrm{Omega}$, cutoff frequency $f_{mathrm{t}}$ reached 11.6THz. The whole process was based on 4 inch GaAs wafer, guarantee stability and conformity in terahertz GaAs SBD integrated circuits working over 1THz.