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N-Doped Zigzag Graphene Nanoribbons For Nanoscale Interconnects

机译:N-掺杂的Z字形石墨烯纳米纳米用于纳米级互连

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The density-functional theory-based investigations of Nitrogen (N) doping effect on the electron transport and the dynamical parameter of Zigzag graphene Nanoribbon (ZGNR), has been performed to improvise it suitability as interconnects. Three possibilities of N impurities around a monovacancy have been investigated in terms of stability, electronic, and transport properties of GNR. The Formation-energy calculations suggest that the formation of the pyridine-type defects with nitrogen doping is energetically more favorable in the presence of a vacancy in comparison to its pristine counterpart. From the electronic bandstructure and density of states analysis, we have found that metallicity of the ZGNR increases with N doping, and from the transport properties analysis, it is found that monovacancy with two nitrogen-doped (Pyr-2N) results in higher current with a constant slope, defends its suitability for nanoscale interconnects.
机译:已经进行了对基于密度的基于氮(n)掺杂效应对电子传输的掺杂和动态参数的研究,以使其适合于互连。在GNR的稳定性,电子和运输性能方面已经研究了单一遗传症周围的N个杂质的三种可能性。形成 - 能量计算表明,与其原始对应物相比,在存在空位的情况下,吡啶型缺陷的形成在存在空位中。从电子带结构和各种分析密度,我们发现ZGNR的金属性随着N掺杂而增加,并且从运输性能分析中,发现具有两个氮掺杂(Pyr-2n)的单芳基度导致更高的电流恒定的斜坡,捍卫其适用于纳米级互连的适用性。

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