Analysis of Spray Deposited Cu2ZnSnXGe1-xS4 Thin Film Solar Cells: Model Creation in SCAPS-1D and Numerical Simulation of Their Performance

摘要

In this work, using the software SCAPS-ID, a simulation model of solar cells (SC) was created based on absorber $c_{u2}ZnSn_{x}Ge_{1-x}S_{4}$ thin films deposited by spray pyrolysis. The I-V characteristics of the obtained model coincided by 75% with the I-V characteristics of real SC based on a thin film of $c_{u2}ZnSnS_{4}$ deposited by a similar method. Numerical simulations were performed to study the effect of changes in the concentration of Ge and Sn on the open-circuit voltage (Voc), short-circuit current density (Jsc), fill factor (FF), efficiency ($eta$ in %), and quantum efficiency $(Q_{E})$ of the device. It is shown that increasing the Ge concentration has a positive effect on the Voc and Jsc parameters. The simulated device based on sample XO. S showed the highest value of Voc= 0.3673 but had slightly lower Jsc and FF. Nevertheless, the value of his $eta$ was 0.47%. Created in the SCAPS-ID software, the SC model based on CZTS/CZTGeS films can be used to theoretically determine the expected performance of real SC on these materials.