RF SPST Switch Based on Innovative Heterogeneous GaN/SOI Integration Technique

摘要

This paper presents an innovative heterogeneous GaN/SOI integration technique implemented on an RF SPST switch. It is intended for 5G applications. The RF switch transistors are GaN based and the substrate is SOI. It allows to integrate RF, analog and digital in one monolithic circuit. The small and large signal measurements show respectively an insertion loss below 0.4 dB up to 30 GHz and a power handling higher than 38 dBm at 900 MHz.