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High Power Density 4 to 16 GHz Non-Uniform Distributed Power Amplifier with a Novel Trifilar

机译:高功率密度4到16 GHz非均匀分布式功率放大器,具有新颖的三种

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This paper describes the design and measured performance of a 4 to 16 GHz non-uniform distributed amplifier fabricated in a 0.15 µm commercial GaN process. The amplifier has 8.7-14.6 dB small-signal gain and produces 37.8-40.2 dBm CW output power with a PAE of up to 34% with good input and output match. It features novel trifilar transformers and spacesaving architecture that achieves an average power density of 1.06 W/mm2, which is the highest reported for similar well-matched broadband amplifiers.
机译:本文介绍了在0.15μm商业GaN工艺中制造的4到16 GHz非均匀分布式放大器的设计和测量性能。放大器具有8.7-14.6 dB的小信号增益,并产生37.8-40.2 dBm CW输出功率,PAE具有良好的输入和输出匹配。它具有新颖的Trifilar变压器和飞溅架构,实现了1.06 W / mm2的平均功率密度,这是类似良好良好匹配的宽带放大器的最高报道。

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