A V-Band Vector Modulator Based Phase Shifter in BiCMOS 0.13 µm SiGe Technology

摘要

This paper presents a vector modulator based phase shifter circuit for the 57–66 GHz Band in IHP 0.13 µm SiGe BiCMOS technology. The input balun is avoided and the single to differential conversion is performed using the input transistors of the variable gain amplifier to achieve small area occupation and power consumption for a scalable design. The full phase range of 0-360° can be reached for a gain higher than -3dB. The 1 dB compression point is reached at -12dBm input power. The power consumption is measured at 45mW, while the active area is only about 0.15mm^{2. The vector modulator characteristics are set by two pairs of control voltages which are applied directly through pins. The paper covers design, simulation and measurement of a prototype chip.}