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Millimeter-Wave E-plane Transmission Lines in Multi-layer Substrate

机译:多层基板中的毫米波E面传输线

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In this work, two kinds of millimeter-wave E-plane transmission lines in multi-layer dielectric substrate and their transitions to the hollow waveguide are proposed and investigated. The transmission lines of E-plane SIW and finline in multi-layer dielectric substrate show advantages of low transmission loss and low profile, which are useful to design antennas and circuits in the millimeter-wave band. In the E-plane SIW structure, four dielectric substrates are stacked to compose an E-plane SIW. The utilization of thin dielectric substrates can control the cutoff frequency of E-plane SIW and significantly reduce leakage power of horizontal polarization between via holes. In the finline structure, a planar transmission line in E-plane is constructed by a slot line inserted in the middle metal pattern between two dielectric substrate layers. The finline is bounded within a closed structure composed of double-layer substrate and two rows of via-hole arrangement, therefore, low dispersion and low radiation loss can be expected in the finline performance. Waveguide transitions are designed for both transmission lines. The dimensions of the transitions were optimized by electromagnetic analysis of the finite element method at 76 GHz. Transmission loss of E-plane SIW and finline was 0.47 dB/cm and 0.3 dB/cm, respectively. Insertion loss of the waveguide-to-E-plane SIW transition and the waveguide-to-finline transition were approximately 0.17 dB.
机译:在这项工作中,提出了多层介电基板中的两种毫米波E面传输线及其到中空波导的过渡。多层电介质基板中的E面SiW和芬L线的传输线显示了低传输损耗和低轮廓的优点,这对于在毫米波带中设计天线和电路是有用的。在E面SiW结构中,堆叠四个电介质基板以构成E面SiW。薄电介质基板的利用可以控制E平面SiW的截止频率,并显着降低通孔之间水平极化的泄漏功率。在芬l线结构中,E平面中的平面传输线由插入中间金属图案中的槽线构成,在两个介电基板层之间。芬奈线在由双层基板组成的封闭结构内界定,因此在芬兰性能下可以预期低分散和低辐射损失。波导转换设计用于两个传输线。通过76GHz的有限元方法的电磁分析优化了过渡的尺寸。 E面SiW和芬林的传输损耗分别为0.47dB / cm和0.3dB / cm。波导到电平面SiW转变的插入损耗和波导至芬兰过渡的差约约为0.17dB。

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