Incorporating Gate-Lag Effects into the Cardiff Behavioural Model

摘要

This paper investigates, for the first time, the sensitivity of the Cardiff Model coefficients to device traps. A pre-bias is utilized to change the traps level of the device before pulsed DC & RF load-pull measurements are performed. It is shown that the pre-bias gate-lag conditions can change the load-pull contours and model coefficients. The Cardiff model coefficients are analysed at different gate-lag levels and their dependence to gate-lag is determined. It is observed that a quadratic function can account for the variation of the model coefficients as a function of the gate-lag pre-bias. Moreover, the variation of these coefficients as a function of time along the RF pulse and their dependency on the pre-bias conditions is also undertaken to show a link between model coefficients and device traps.