23.1 270-to-300GHz Double-Balanced Parametric Upconverter Using Asymmetric MOS Varactors and a Power-Splitting-Transformer Hybrid in 65nm CMOS

摘要

Wireless communication at $sim 300$ GHz is drawing attention due to its potential to support a high data-rate using the wide available bandwidth. Transmitters operating at $sim 300$ GHz have been reported in [1] –[5]. In order to support the high-order modulation, high data-rate, and an increased range, the transmitter must have a high output 1dB compression point (OP $_{1dB})$ and a wide bandwidth. Unfortunately, instead of OP1dB, only the saturated output power levels, ${P}_{sat}$, of the CMOS transmitters $[3- 5] _{}$ are reported. A 272GHz CMOS amplifier has been reported in [6], but it only achieves an OP1dB of -10.18dBm and a 3dB bandwidth of less than 5GHz. Broadband power amplification at 300GHz in CMOS is not practical since the transistor fmax is $sim 350$ GHz or less. Due to this, the CMOS-transmitter linear output power is limited by the upconversion mixer OP1dB. Unfortunately, the mixers operating near 300GHz suffer from low conversion gain (CG) and OP1dB.