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首页> 外文期刊>Microwave and Wireless Components Letters, IEEE >60 GHz Double-Balanced Gate-Pumped Down-Conversion Mixers With a Combined Hybrid on 130 nm CMOS Processes
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60 GHz Double-Balanced Gate-Pumped Down-Conversion Mixers With a Combined Hybrid on 130 nm CMOS Processes

机译:60 GHz双平衡栅极泵浦下变频混频器,具有在130 nm CMOS工艺上的混合电路

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摘要

Two 60-GHz compact double-balanced gate-pumped mixers using standard bulk 0.13 $mu{rm m}$ CMOS process are presented. The homodyne and heterodyne mixers utilize small-size combined hybrids and demonstrated a small chip size of 0.8 $times$ 0.85 and $0.7times 0.7 {rm mm}^{2}$, including pads. With 5 dBm LO power, the best measured conversion gains are 1 and 0 dB in the 3 dB bandwidths of 15 GHz from 54 to 69 GHz and 14 GHz from 53 to 67 GHz RF. The LO-to-RF isolations are greater than 45 dB at a low bias of 1.2 V and 12 mA. This is the first demonstration of the double-balanced gate mixer in millimeter wave frequency.
机译:提出了两个采用标准的0.13μmrms CMOS工艺的60 GHz紧凑型双平衡栅极泵浦混频器。零差和外差混合器利用小尺寸的混合混合器,并显示出包括垫在内的小芯片尺寸为0.8×0.85×0.7×0.7 {rm mm} ^ {2} $。凭借5 dBm的LO功率,在54 GHz至69 GHz的15 GHz和53 GHz至67 GHz的14 GHz的3 dB带宽中,测得的最佳转换增益分别为1 dB和0 dB。 LO至RF隔离在1.2 V和12 mA的低偏置下大于45 dB。这是毫米波频率下的双平衡栅极混频器的首次演示。

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