Utilizing low loss dielectric material for high performance DRAM window-BGA design

摘要

The high performance window-BGA for a high speed Dynamic Random Access Memory has been designed. In this paper, low loss material was studied and adopted in order to improve the electrical performance in organic substrates. The specific test patterns were designed to evaluate the dielectric loss of different materials. Furthermore, applied the low loss material on DRAM substrate design, and analyzed the high-frequency response to verify the electrical performance between general and low loss dielectric materials. Lastly, the actually function test was performed to distinguish speed grade and verify the performance improvement.