Excimer-laser activation of dopants in silicon: a new concept for auniform treatment over a whole die area

摘要

Formation of ultra shallow junction will need laser annealingprocess in an imminent future. The VEL 15 laser source from SOPRA allowsto anneal in a single shot a complete die with ±3.5% uniformity,and with enough energy to melt silicon and activate dopants. Boron andBF₂ implanted wafers have been laser annealed, and thencharacterized with different techniques. Ultra shallow junction around20 nm and less than 400 Ohms/sq have been performed. Feasibility ofhighly activated p-type junction is demonstrated with a whole die areaexposition