首页> 外文会议>Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual >Can digital GaAs be used in a space environment? A look at singleevent upset in GaAs
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Can digital GaAs be used in a space environment? A look at singleevent upset in GaAs

机译:数字砷化镓可以在太空环境中使用吗?一看单GaAs中的事件不安

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The vulnerability to SEU (single event upset) of devices producedby standard GaAs processes is too great to allow their use in spaceapplications without some type of mitigation technique. GaAs foundriescan provide solutions for the short term by providing SEU hardeneddesigns incorporating redundancy for latches in standard cell familiesand gate arrays. As research progresses, techniques are expected to befound to reduce charge enhancement effects in GaAs FETs.Industry-developed solutions for sidegating and backgating effects mayalso improve SEU sensitivity. Designs intended for SEU environments canincorporate several mitigation techniques to provide satisfactoryoperation. However, hardening at the device may provide the bestperformance option
机译:所生产设备的SEU(单事件失败)漏洞 标准的砷化镓工艺太大,无法在太空中使用 没有某种缓解技术的应用程序。砷化镓铸造厂 可以通过提供强化的SEU为短期提供解决方案 包含标准单元系列锁存器冗余的设计 和门阵列。随着研究的进展,技术有望成为现实。 被发现可以降低GaAs FET中电荷增强效应。 行业开发的解决侧面效应和背面效应的解决方案可能会 还可以提高SEU灵敏度。针对SEU环境的设计可以 结合了几种缓解技术以提供令人满意的 手术。但是,在设备上进行硬化可能会提供最佳效果 性能选项

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