首页> 外文会议>Electronics, Circuits and Systems, 2008 15th IEEE International Conference on >Analysis of the impact of process variations on static logic circuits versus fan-in
【24h】

Analysis of the impact of process variations on static logic circuits versus fan-in

机译:分析工艺变化对静态逻辑电路和扇入的影响

获取原文

摘要

In this paper, the effect of process variations on the delay of CMOS static logic circuits is discussed versus fan-in. In particular, the effect of process variations in stacked transistors (which determine the fan-in) is analytically evaluated. From circuit analysis, a simple analytical model is derived that expresses the delay variation as a function of the number of stacked transistors and transistor size. Theoretical results are useful to gain an insight into the dependence of the delay variation on design parameters. Monte Carlo simulations on a 90-nm technology were performed to validate the results.
机译:在本文中,相对于扇入,讨论了工艺变化对CMOS静态逻辑电路延迟的影响。尤其是,通过分析评估了堆叠晶体管(决定扇入)中工艺变化的影响。从电路分析中,可以得出一个简单的分析模型,该模型将延迟变化表示为堆叠晶体管的数量和晶体管尺寸的函数。理论结果有助于深入了解延迟变化对设计参数的依赖性。进行了90纳米技术的蒙特卡洛模拟,以验证结果。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号