High-efficiency X-band GaInP/GaAs HBT MMIC power amplifier forstable long pulse and CW operation

摘要

We report on the design and fabrication of high-efficiencymonolithic X-band power amplifiers using a well optimized GaInP/GaAsheterojunction bipolar transistor (HBT) technology. Ballast resistorshave been introduced to each emitter finger to avoid completely thecurrent collapse effect and thus enabling long pulse and continuous wave(CW) operation. The amplifiers are designed for operation at moderatecurrent densities to reduce junction temperature and to improvereliability. State-of-the-art performances with maximum output powers of9 W with a power-added efficiency (PAE) of 42 % and peak power-addedefficiencies of 45 % have been achieved at 10 GHz under critical longpulse conditions (pulse width=100 μs, duty cycle=10 %). To ourknowledge these results represent the best performance of any GaInP/GaAsHBT MMIC power amplifier considering efficiency, output power, operationfrequency, and pulse conditions