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Thermal analysis of PT IGBT by using ANSYS

机译:利用ANSYS对PT IGBT进行热分析

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摘要

As the power density and switching frequency increase, thermal analysis of power electronics system becomes imperative. The analysis provides valuable information on the semiconductor rating, long-term reliability and efficient heat-sink design. In this paper, the thermal model and thermal distribution of discrete Insulated Gate Bipolar Transistor with non heat-sink and heat-sink has been studied. For analysis of thermal distribution, we obtained results by using finite element simulator, ANSYS and compared with experimental data.
机译:随着功率密度和开关频率的增加,电力电子系统的热分析势在必行。该分析提供了有关半导体额定值,长期可靠性和高效散热设计的有价值的信息。本文研究了具有非散热片和散热片的分立式绝缘栅双极晶体管的热模型和热分布。为了分析热分布,我们使用有限元仿真器ANSYS获得了结果,并与实验数据进行了比较。

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