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Comparative investigation of plating conditions on self-annealingof electrochemically deposited copper films

机译:自退火中电镀条件的比较研究电化学沉积铜膜

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This paper discusses the effects of chemistries and platingconditions on the self-annealing or recrystallization ofelectrochemically deposited copper films. Current density, platingtemperature and the concentrations of the organic additives were foundto strongly affect self-annealing of the copper films. The results showthat copper films deposited at higher current densities, higherconcentrations of organic additives or at lower plating temperaturestake less time to complete self-annealing at room temperature
机译:本文讨论了化学和镀层的影响 自退火或重结晶的条件 电化学沉积的铜膜。电流密度,电镀 发现温度和有机添加剂的浓度 强烈影响铜膜的自退火。结果显示 铜膜以更高的电流密度沉积, 有机添加剂的浓度或较低的电镀温度 在室温下完成自我退火所需的时间更少

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