A high Q on-chip Cu inductor post process for Si integratedcircuits

摘要

A technique has been developed to add high Q inductors toconventional silicon integrated circuits as a post processing step. Theinductors are formed by copper plating over a low k dielectric layer ofpolyimide. An electroless copper deposition technique is used with aplating guide providing a simple method of producing high qualitypatterned metal. Inductors with a peak Q as high as 17 at a frequency of2 GHz have been fabricated