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Overview of physics of stress-induced voiding in microelectronics metallizations

机译：微电子金属化中的应力诱导空洞的物理学概述

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《Integrated Reliability Workshop Final Report, 2004 IEEE International》||p.198|共1页
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Sullivan T.d.;
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机译：基于物理的应力诱导和电迁移诱导的空隙的仿真及其在片上互连的相互作用
2. Resistance characterization of Cu stress-induced void migration at narrow metal finger connected with wide lead [J] . Robin C.J. Wang, K.S. Chang-Liao, T.K. Wang, Thin Solid Films . 2007,第2a4期

机译：铜与宽铅连接的金属指上铜应力诱导的空隙迁移的电阻特性
3. Stress-induced deceleration of electromigration-driven void motion in metallic thin films [J] . M. Rauf Gungor, Dimitrios Maroudas Journal of Applied Physics . 2007,第6期

机译：应力诱导的金属薄膜中电迁移驱动空隙运动的减速
4. A mechanism of stress-induced metal void in narrow aluminum-based metallization with the HDP CVD oxide dielectric [C] . Soo Geun Lee, Heok-Sang Oh Interconnect Technology, 1999. IEEE International Conference . 1999

机译：HDP CVD氧化物电介质在狭窄的铝基金属化中应力诱导金属空隙的机理
5. PHYSICS OF PHOTOCHEMICAL METALLIZATION: PHOTODISSOCIATION OF METAL ALKYL MOLECULES IN GAS PHASE AND ON SURFACES (MICROELECTRONICS, MICRO FABRICATION, SURFACE PHYSICS, MOLECULAR, SPECTROSCOPY). [D] . CHEN, JULIAN CHENGJUN. 1985

机译：光化学金属化物理：气相和表面（金属，微结构，表面物理，分子，光谱）中金属烷基分子的光离解。
6. Overview of Micro- and Nano-Technology Tools for Stem Cell Applications: Micropatterned and Microelectronic Devices [O] . Stefano Cagnin, Elisa Cimetta, Carlotta Guiducci, 2012

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7. In-situ cyclic stress experiment at the Clinton P. Anderson Meson Physics Facility (LAMPF) for determining the effect of dislocation vibration on void growth in metals during irradiation. Protons at LAMPF [O] . W.V. Green, W.F. Sommer, C.A. Coulter 1979

机译：在克林顿P.安德森·梅森物理设施（LAMPF）的原位循环应力实验，用于确定位错振动对辐射期间金属的空隙生长的影响。 Lampf的质子
8. In-Situ Cyclic Stress Experiment at the Clinton P. Anderson Meson Physics Facility (LAMPF) For Determining the Effect of Dislocation Vibration on Void Growth in Metals During Irradiation [R] . Green, W. V., Sommer, W. F., Coulter, C. A. 1979

机译：克林顿p.安德森介子物理设施（LampF）的原位循环应力实验，用于确定位错振动对辐照过程中金属空隙生长的影响

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